UFS burner-IC Programmer Machine-IC Automated Programmer-Acroview Technology Co., Ltd.

UFS solution: high-performance storage solution

Shenzhen Angke Technology Co., Ltd. (stock code: 873207), a professional IC burner manufacturer, has launched Universal Flash Storage (UFS) dedicated engineering and mass-produced burners, as well as automated programming equipment. The newly launched new generation burner integrates the design and application of the UFS system, and is suitable for R&D, product verification, and factory small batch and mass production requirements. Reliable storage with low power consumption and high performance UFS is an advanced high-performance interface designed for computing and mobile systems such as smartphones and tablets that require the lowest power consumption. eUFS...

2020-11-21

UFS 3.0 reading and writing test data exposure: spike UFS 2.1 and eMMC

Shenzhen Angke Technology Co., Ltd., a professional IC burner manufacturer, has launched a dedicated engineering and mass production burner for Universal Flash Storage (UFS), as well as automated burning equipment. The newly launched new generation burner integrates the design and application of the UFS system, and is suitable for R&D, product verification, and factory small batch and mass production requirements. In January 2018, UFS 3.0 was officially released. As an iterative upgrade product of UFS 2.0 and 2.1, UFS 3.0 has brought very significant improvements and advancements in performance. but,...

2020-11-21

Comparison and difference between NorFlash, NandFlash and eMMC flash memory

Flash memory (English: Flash Memory) is a form of electronically erasable programmable read-only memory that allows memory to be erased or written multiple times during operation. This technology is mainly used for general data storage, as well as the exchange and transmission of data between computers and other digital products, such as memory cards and U disks. Flash memory is a non-volatile memory, so it does not need to consume power just for saving data. Compared with hard disks, flash memory also has better dynamic shock resistance. These characteristics are the reason why flash memory is widely adopted by mobile devices. Another feature of flash memory:...

2020-11-21

Basic structure and characteristics of NOR FLASH and NAND FLASH

There are many kinds of non-volatile storage elements, such as EPROM, EEPROM, NOR FLASH and NAND FLASH. The first two have been basically eliminated, so I only focus on the latter two. This article discusses the basic memory cell structure, write operation, The technology of erasing operation and read operation is briefly introduced, and the characteristics and application differences of NOR and NAND determined by the storage structure are introduced, and the subsequent hardware design and driver programming are pavement. 1 FLASH basic storage unit --- floating gate field effect tube 　　 NOR FLASH and NAND FLASH both use floating gate field effect tube (Floati...

2020-11-21

Talking about SSD, eMMC, UFS

At this time, posting this article will inevitably be suspected of rubbing hot spots. But as a graduate student of computer architecture, my curiosity couldn't be restrained when these terms were flying in the sky, and I wanted to find out the true nature of these technologies. This article does not comment on a specific event, only analyzes and compares these three technologies from a technical perspective. Even as your own technical reserve + popular science. First of all, these three technologies belong to different types of flash memory. The difference lies in the controller, interface standards, and lower-level Flash chip standards. They are...

2020-11-21

Analysis of Nand Flash Storage Structure

NandFlash memory is composed of multiple Blocks, and each Block is composed of multiple Pages. The size of Pages is generally 2K+64Bytes or 512+16Bytes. Page is the basic unit of reading and programming, and the basic unit of erasing is Block. Figure 1 NAND Flash storage results The page of NAND Flash contains two fields: Main Area and Spare Area. There are 512*8 (or 256*16) or 2048*8 in the "Main Area". Or 1024*16) bits, there are 16*8 (or 8*16) or 64*8 (or 32*16) bits in the "spare area", so that each page...

2020-11-21

Analyze the programming structure of NAND Flash

Analyzing the programming structure of NAND Flash. In the previous article, we introduced the difference between NAND Flash and NOR Flash. From the structure and principle, the ROM-like structure of NOR Flash makes programming easy, so many engineers are used. If the cost is not too high, NAND Flash simply cannot survive. NAND Flash is more and more popular with consumers due to its low price and large storage capacity, especially consumers who need to store large amounts of data. What should be paid attention to when programming NAND Flash? Partition (Partition) defines the essence of partition is...

2020-11-21

UFS solution: high-performance storage solution

UFS 3.0 reading and writing test data exposure: spike UFS 2.1 and eMMC

Comparison and difference between NorFlash, NandFlash and eMMC flash memory

Basic structure and characteristics of NOR FLASH and NAND FLASH

Talking about SSD, eMMC, UFS

Analysis of Nand Flash Storage Structure

Analyze the programming structure of NAND Flash

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